Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-06-06
2008-10-28
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S700000
Reexamination Certificate
active
07443035
ABSTRACT:
A method of forming a penetration electrode in which an electroconductive substance is inserted into a micropore that has one end blocked off only by wiring and a pad formed by an electroconductive substance without the wiring and pad being broken. In this method of forming a penetration electrode, an electroconductive substance is inserted into the micropore that penetrates a substrate and that has one aperture blocked off by an electroconductive thin film. After a protective member that holds the electroconductive thin film is provided on a surface on the electroconductive thin film side of the substrate, an electroconductive substance is inserted from the other aperture of the micropore.
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Takizawa Takashi
Yamamoto Satoshi
Fujikura Ltd.
Potter Roy K
Sughrue & Mion, PLLC
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