Method of forming a patterned in-situ high Tc superconductive fi

Details Method of forming a patterned in-situ high Tc superconductive fi Method of forming a patterned in-situ high Tc superconductive fi

1991-05-15

1993-05-18

Beck, Shrive

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505732, 505728, 505730, 427 62, 427 63, 156643, 156646, 156637, 1566591, 1566611, 156656, B05D 512, H01L 3900

Patent

active

052121470

ABSTRACT:
A method of forming a patterned in-situ photoconductive film on a substrate including providing a patterned photoresist layer on upper and lower metallic layers formed on a substrate. The patterned photoresist layer is used to form an opening in the upper layer. The pattern in the upper layer thereby has an opening having a geometry substantially similar to a desired pattern of photoconductive material to be formed on the substrate. A portion of the lower layer is removed to form cantilevered regions of the upper layer adjacent to the opening. Superconductive material is then deposited on the substrate by directing the material through the opening at an angle generally perpendicular to the substrate. The superconductive film on the substrate within the lower layer is coated with a polymer. The upper and lower layers and all superconductive material on those layers are removed to leave the polymer-encapsulated superconductive material on the substrate. The polymer is removed by plasma etching that does not adversely affect the superconductive material. Thus, the superconductive material on the substrate is subjected only to post-deposition process steps of depositing the polymer and removing the polymer.

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