Method of forming a pattern of a multilayer type semiconductor d

Details Method of forming a pattern of a multilayer type semiconductor d Method of forming a pattern of a multilayer type semiconductor d

1994-04-21

1995-09-19

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

430312, 430313, 430322, G03F 900

Patent

active

054514797

ABSTRACT:
In a method of forming a pattern of a multilayer type semiconductor device according to the present invention, reference marks are formed in advance by positioning of a stage on a semiconductor wafer 300, positions of those reference marks are compared with positions of first alignment marks for measuring an error of a first exposure apparatus. After correcting the error, a second layer is formed with a second exposure apparatus, and positions of the reference marks are compared with positions of second alignment marks provided on the second layer for measuring an error of the second exposure apparatus. In other words, there is provided the method of forming patterns of the multilayer type semiconductor device allowing measurement of an error due to a lens distortion readily included in each layer by forming reference marks in advance on the semiconductor wafer for measuring the lens distortion included in each layer.

REFERENCES:
patent: 5252414 (1993-10-01), Yamashita et al.

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