Method of forming a passivation film

Details Method of forming a passivation film Method of forming a passivation film

1990-01-18

1991-05-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437978, 148DIG137, H01L 21312

Patent

active

050136895

ABSTRACT:
A method of forming a passivation film for protection of circuits and/or curcuit elements on semiconductor chips, IC chips, LSI chips, VLSI chips or microcomputer, wherein the resist film used in patterning the passivation film is employed as part of the passivation film after being subjected to post-baking, and the upper layer of the passivation film is made of a material selected from the group consisting of a light-sensitive polyimide, silicon resin, epoxy resin and silicon ladder polymer.

REFERENCES:
patent: 4011143 (1977-03-01), Del Monte et al.
patent: 4078096 (1978-03-01), Redmond et al.
patent: 4167413 (1979-09-01), Christ et al.
patent: 4184909 (1980-01-01), Chang et al.
patent: 4328262 (1982-05-01), Kurahashi et al.
patent: 4357203 (1982-11-01), Zelez
patent: 4451973 (1984-06-01), Tateno et al.
patent: 4487652 (1984-12-01), Almgren
patent: 4495220 (1985-01-01), Wolf et al.
patent: 4523372 (1985-06-01), Balda et al.
patent: 4604294 (1986-08-01), Tanaka et al.
patent: 4654223 (1987-03-01), Araps et al.
patent: 4670497 (1987-06-01), Lee
Electronics International, vol. 54, No. 12, 16th Jun. 1981, p. 73, New York, U.S.; J. Gosch: "Polymer Doubles as Photoresist and Insulator".

Affiliated with

Also associated with

Rating

Method of forming a passivation film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a passivation film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a passivation film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-939515