Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2005-05-03
2005-05-03
Lebentritt, Michael (Department: 2824)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S503000, C438S505000, C438S509000
Reexamination Certificate
active
06887736
ABSTRACT:
A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate.
REFERENCES:
patent: 4272754 (1981-06-01), Lou
patent: 4358950 (1982-11-01), Chang
patent: 4358951 (1982-11-01), Chang
patent: 4568397 (1986-02-01), Hoke et al.
patent: 4612411 (1986-09-01), Wieting et al.
patent: 4876984 (1989-10-01), Kinoshita et al.
patent: 4881979 (1989-11-01), Lewis
patent: 5157136 (1992-10-01), Arnold et al.
patent: 5369290 (1994-11-01), Kawasaki et al.
patent: 5413959 (1995-05-01), Yamamoto et al.
patent: 5458085 (1995-10-01), Kondo et al.
patent: 5468678 (1995-11-01), Nakamura et al.
patent: 5603778 (1997-02-01), Sonoda
patent: 5668395 (1997-09-01), Razeghi
patent: 5769963 (1998-06-01), Fujioka et al.
patent: 5804466 (1998-09-01), Arao et al.
patent: 5863326 (1999-01-01), Nause et al.
patent: 5882805 (1999-03-01), Higa et al.
patent: 5897332 (1999-04-01), Hori et al.
patent: 5900060 (1999-05-01), Nause et al.
patent: 6045626 (2000-04-01), Yano et al.
patent: 6057561 (2000-05-01), Kawasaki et al.
patent: 6147747 (2000-11-01), Kavaya et al.
patent: 6181723 (2001-01-01), Okubo et al.
patent: 6261862 (2001-07-01), Hori et al.
patent: 6291085 (2001-09-01), White et al.
patent: 6329216 (2001-12-01), Matsumoto et al.
patent: 6342313 (2002-01-01), White et al.
patent: 6407405 (2002-06-01), Sano et al.
patent: 6410162 (2002-06-01), White et al.
patent: 6472241 (2002-10-01), Iwata et al.
patent: 6475825 (2002-11-01), White et al.
patent: 6479801 (2002-11-01), Shigeoka et al.
patent: 6491884 (2002-12-01), Faller et al.
patent: 6506994 (2003-01-01), Wang et al.
patent: 6509555 (2003-01-01), Riess et al.
patent: 6521550 (2003-02-01), Tanabe et al.
patent: 6524428 (2003-02-01), Tamura et al.
patent: 6527858 (2003-03-01), Yoshida et al.
patent: 6528431 (2003-03-01), Tanabe et al.
patent: 6531408 (2003-03-01), Iwata et al.
patent: 6559736 (2003-05-01), Lu et al.
patent: 6620709 (2003-09-01), Kapolnek et al.
patent: 6621192 (2003-09-01), Lu et al.
patent: 6673478 (2004-01-01), Kato et al.
patent: 20020028571 (2002-03-01), Cheung
patent: 20030011047 (2003-01-01), Cunningham et al.
Minegishi et al, Growth of p-type Zinc Oxide Films by Chemical Vapor Depositions Article, Nov. 1, 1997, L 1453-L 1455, vol. 36, Department of Electrical Engineering and Computer Science, Yamanashi University, 4 Takeda, Kofu 400, Japan.
Yamamoto et al, Solution Using a Codoping Method to Unipolarity for the Fabrication ofp-Type ZnO, Article, Feb. 15, 1999, L 166 -L 169, vol. 38, Japanese Journal of Applied Physics, Japan.
Amano et al, Metalorganic Vapor Phase Epitaxial Growth of a High Quality GaN Film Using an AIN Buffer Layer, Article, Feb. 3, 1986, 353 -355, vol. 48, American Institute of Physics, Japan.
Hashimoto, “Effects of hydrogen in an ambient on the crystal growth . . . ”, Journal of Crystal Growth 68, (1984), pps. 163-168.
Woelk & Beneking, “A novel movpe reactor with a rotating substrate”, Journal of Crystal Growth 93, (1988), pps. 216-219.
Goodings et al, “A new inlet area design for horizontal movpe reactors”, Journal of Crystal Growth 96, (1989), pps. 13-18.
Zembutsu & Sasaki, “Growth of GaN crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy”, Appl. Phys. Lett. 48, (13), Mar. 13, 1986, pps. 870-872.
*Ohki et al, “Fabrication and properties of a practical blue-emitting GaN m-I-s diode,” Ins. Phys. Conf. Ser. No. 63, Chapter 10, Paper presented at Int Symp. GaAs and Related compounds, Japan 1981.
Jianhua Hu and Roy G. Gordon, “Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium,” J. Appl. Phys. vol. 72, No. 11, Dec. 1, 1992, pp. 5381-5392.
G.S. Tompa, Y. Li, D. Bingaman, M. Migliuolo and J. Doyle, “ZnO: MOCVD processing and material applications,” Materials Technology ZnOpaper.doc, Feb. 11, 1997, pp. 1-17, Piscataway, NJ.
G.S. Tompa, L.G. Provost, and J. Cuchiaro, “Metal Organic Chemical Vapor Deposition of Oxide Films for Advanced Applications,” Transparent Conductive Oxides, Jun. 19-20, 2000, pp. 1-12, Denver, Co.
C.R. Gorla, N.W. Emanetoglu, S. Liang, W.E. Mayo, and Y. Lu, “Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (0112) sapphire by metalorganic chemical vapor deposition,” Journal of Applied Physics, vol. 85, No. 5, Mar. 1, 1999, pp. 2595-2602, Piscataway, NJ.
Y. Liu, C.R. Gorla, S. Liang, N. Emanetoglu, Y. Lu, H. Shen, and M. Wraback, “Ultraviolet Detectors Based on Epitaxial ZnO Films Grown by MOCVD,” Journal of Electronic Materials, vol. 29, No. 1, 2000, pp. 69-74, Piscataway, NJ.
Ganesan Shanthi
Maciejewski Joseph Owen
Munne Vincente
Nause Jeffrey E.
Alston & Bird LLP
Cermet, Inc.
Lebentritt Michael
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