Method of forming a nitrided silicon dioxide (SiO.sub.x N.sub.y)

Details Method of forming a nitrided silicon dioxide (SiO.sub.x N.sub.y) Method of forming a nitrided silicon dioxide (SiO.sub.x N.sub.y)

1991-06-21

1993-03-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437238, 437235, 437978, 148DIG112, 148DIG114, H01L 2102

Patent

active

051983923

ABSTRACT:
In a method of forming an insulating film, a silicon dioxide film is formed on a silicon substrate by performing heat treatment in an oxidizing gas atmosphere which does not contain nitrogen, and then the silicon dioxide film is oxynitrided by performing heat treatment in an nitrous oxide atmosphere. Prior to the formation of the silicon dioxide film, the silicon substrate is cleaned by heating it in a reducing gas atmosphere, and then heating it in a reactive gas atmosphere.

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