Method of forming a nitride-based semiconductor

Details Method of forming a nitride-based semiconductor Method of forming a nitride-based semiconductor

2007-10-09

2007-10-09

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S027000, C438S508000, C438S508000, C257S103000, C257S632000

Reexamination Certificate

active

11518174

ABSTRACT:
A nitride-based semiconductor element having excellent element characteristics is obtained by forming a nitride-based semiconductor layer having excellent crystallinity without performing a long etching process. This nitride-based semiconductor element and the method thereof includes forming a mask layer having a recess portion on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer. A nitride-based semiconductor layer is laterally grown on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer. Thus, the strain of the laterally grown nitride-based semiconductor layer is so relaxed that the crystallinity of the nitride-based semiconductor layer is improved.

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