Method of forming a narrow gate, and product produced thereby

Details Method of forming a narrow gate, and product produced thereby Method of forming a narrow gate, and product produced thereby

2005-11-15

2005-11-15

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S755000, C438S756000, C438S757000

Reexamination Certificate

active

06964929

ABSTRACT:
A method of making a semiconductor structure includes trimming a patterned hard mask with a wet etch, wherein the hard mask is on a gate layer; and etching the gate layer. In making multiple structures on a semiconductor wafer, an average width of lines in the patterned hard mask is trimmed by at least 100 Å.

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