Method of forming a multiple layer dielectric and a hot film sen

Details Method of forming a multiple layer dielectric and a hot film sen Method of forming a multiple layer dielectric and a hot film sen

1988-04-01

1990-04-17

Herbert, Thomas J.

Stock material or miscellaneous articles

Structurally defined web or sheet

Including components having same physical characteristic in...

340692, 428450, 428457, 428901, B32B 702, B32B 1508

Patent

active

049179403

ABSTRACT:
A multiple layer dielectric for use in a hot-film laminar separation layer 21. The multiple layer dielectric substrate is formed by depositing a first layer 22 of a thermoplastic polymer such as on an electrically conductive substrate such as the metal surface 23 of a model 24 to be tested under cryogenic conditions and high Reynolds numbers. Next, a second dielectric layer 26 of fused silica is formed on the first dielectric layer 22 of thermoplastic polymer. A resistive metal film is deposited on selected areas of the multiple layer dielectric substrate of form one or more hot-film sensor elements 27 to which aluminum electrical circuits 28 deposited upon the multiple layered dielectric substrate are connected.

REFERENCES:
patent: 4061029 (1977-12-01), Fletcher et al.
C. B. Johnson et al., ICIASF '87 Record, "International Congress On Instrumentation In Aerospace Simulation Facilities", Williamsburg Va.; Jun. 22, 1987, pp. 141-155.
AIAA-87-0049, A Transition Detection Study Using A Cryogenic Hot Film System in the Langley 0.3 Meter Transonic Cryogenic Tunnel; Presented at the AIAA 25th Aerospace Sciences Meeting; 1/1-15/77.

Affiliated with

Also associated with

Rating

Method of forming a multiple layer dielectric and a hot film sen does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a multiple layer dielectric and a hot film sen, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a multiple layer dielectric and a hot film sen will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1051825