Method of forming a multi-layer semiconductor structure...

Details Method of forming a multi-layer semiconductor structure... Method of forming a multi-layer semiconductor structure...

2007-12-11

2007-12-11

Zarneke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C257S723000, C257S701000, C257SE25006, C257SE21499

Reexamination Certificate

active

10749103

ABSTRACT:
A method of forming a multi-layer semiconductor structure includes attaching a handle-member to a top surface of a first structure using a first interface. At least one region of a bottom surface of the first structure is etched to form at least a first via-hole for exposing a portion of a first conductive member defined on the first structure. A conductive material is disposed in the first via-hole such that a first end of the conductive material is in electrical communication with the first conductive member and a second end of the conductive material is exposed at the bottom surface of the first structure. A second interface is disposed over at least the second end of the conductive material, which serves as a bonding and/or electrical interface between the first conductive member defined on the first structure and a second structure of the multi-layer semiconductor device structure.

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