Method of forming a MOSFET with both improved breakdown resistan

Details Method of forming a MOSFET with both improved breakdown resistan Method of forming a MOSFET with both improved breakdown resistan

1983-09-15

1985-02-19

Hearn, Brian L.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 357 23, H01L 21265

Patent

active

044996527

ABSTRACT:
A field effect transistor has improved punch-through resistance by the implantation of a dose of ions through the center of the active area. The energy of the dose is such that the ion concentration peaks at the depth most susceptible to punch-through. The threshold voltage of the transistor is set by the combination of a lower than normal threshold implant and the tail concentration of the blocking implant.

REFERENCES:
patent: 4247860 (1981-01-01), Tihanyi
Colclaser, R. A., Microelectronics: Processing and Device Design, John Wiley & Sons, N.Y., 1980, TK 7874 C63 C.2, pp. 256-266.

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