Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2011-06-07
2011-06-07
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S238000, C438S763000, C257S528000, C257SE43006, C336S200000
Reexamination Certificate
active
07955868
ABSTRACT:
A method of forming a micromagnetic device on a substrate including forming a first insulating layer above the substrate, a first seed layer above the first insulating layer, a first conductive winding layer above the first seed layer, and a second insulating layer above the first conductive winding layer. The method also includes forming a first magnetic core layer above the second insulating layer, a third insulating layer above the first magnetic core layer, and a second magnetic core layer above the third insulating layer. The method still further includes forming a fourth insulating layer above the second magnetic core layer, a second seed layer above the fourth insulating layer, and a second conductive winding layer above the second seed layer and in vias to the first conductive winding layer. The first and second conductive winding layers form a winding for the micromagnetic device.
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paten
Filas Robert W.
Liakopoulos Trifon M.
Lotfi Ashraf W.
Panda Amrit
Enpirion, Inc.
Munoz Andres
Pham Thanh V
Slater & Matsil L.L.P.
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