Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Reexamination Certificate
2011-05-17
2011-05-17
Culbert, Roberts (Department: 1716)
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
C438S717000
Reexamination Certificate
active
07943053
ABSTRACT:
A method of forming a micro pattern in a semiconductor device includes forming an etching object layer and a hard mask layer on a semiconductor substrate. Cross-shaped first auxiliary patterns are formed on the hard mask layer. An insulating layer is formed on the hard mask layer including the first auxiliary pattern. A second auxiliary pattern is formed on the insulating layer between the first auxiliary patterns. An etching process is performed such that the insulating layer remains only on a lower portion of the second auxiliary pattern. The hard mask is etched through an etching process using the first and second auxiliary patterns as an etching mask to form a hard mask pattern. The etching object layer is etched using the hard mask pattern as an etching mask.
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Culbert Roberts
Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
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