Method of forming a metal wire in a semiconductor device

Details Method of forming a metal wire in a semiconductor device Method of forming a metal wire in a semiconductor device

1994-09-15

1996-11-12

Fourson, George

Fishing, trapping, and vermin destroying

437190, 437194, 437246, 437247, H01L 2144

Patent

active

055739784

ABSTRACT:
A method of forming a metal wire in a semiconductor device is disclosed. A multistage process, using the chemical vapor deposition method, with intermediate exposure to the atomsphere is to employed to deposit several layers of thin metal nitride film around and into a contact hole or via hole. Accordingly, the electrical connecting characteristic of a metal wire is enhanced.

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patent: 5231052 (1993-07-01), Lu et al.
patent: 5378660 (1995-01-01), Ngan et al.
J. J. Estabil, et al "Electromigration Improvements with Titaneism Underlay and Overlayin Al(Cu) Metalleorgy" VLSI Conf. (Jun. 11-12, 1991) pp. 242-248.

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