Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2007-12-18
2007-12-18
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making passive device
C438S639000
Reexamination Certificate
active
10820476
ABSTRACT:
The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to have a number of loops, the metal trace forms an inductor with an increased Q.
REFERENCES:
patent: 3573540 (1971-04-01), Osepchuk
patent: 4165558 (1979-08-01), Armitage, Jr. et al.
patent: 4541893 (1985-09-01), Knight
patent: 5434094 (1995-07-01), Kobiki et al.
patent: 5472901 (1995-12-01), Kapoor
patent: 5741741 (1998-04-01), Tseng
patent: 5952704 (1999-09-01), Yu et al.
patent: 5976972 (1999-11-01), Inohara et al.
patent: 5986346 (1999-11-01), Katoh
patent: 5998299 (1999-12-01), Krishnan
patent: 6051470 (2000-04-01), An et al.
patent: 6107177 (2000-08-01), Lu et al.
patent: 6150725 (2000-11-01), Misawa et al.
patent: 6191023 (2001-02-01), Chen
patent: 6197682 (2001-03-01), Drynan et al.
patent: 6218302 (2001-04-01), Braeckelmann et al.
patent: 6232215 (2001-05-01), Yang
patent: 6258720 (2001-07-01), Gris
patent: 6277727 (2001-08-01), Kuo et al.
patent: 6281135 (2001-08-01), Han et al.
patent: 6326673 (2001-12-01), Liou
patent: 6362012 (2002-03-01), Chi et al.
patent: 6395637 (2002-05-01), Park et al.
patent: 6413832 (2002-07-01), Wu et al.
patent: 6417087 (2002-07-01), Chittipeddi et al.
patent: 6437385 (2002-08-01), Bertin et al.
patent: 6444517 (2002-09-01), Hsu et al.
patent: 6495469 (2002-12-01), Yang et al.
patent: 6566242 (2003-05-01), Adams et al.
patent: 6613668 (2003-09-01), Meijer et al.
patent: 6664581 (2003-12-01), Stamper
patent: 6703710 (2004-03-01), Hopper et al.
patent: 2002/0024150 (2002-02-01), Farrar
patent: 2002/0151165 (2002-10-01), Chung
U.S. Appl. No. 10/219,212, filed Aug. 15, 2002, Hopper et al.
U.S. Appl. No. 10/219,235, filed Aug. 15, 2002, Hopper et al.
Drury Robert
Hopper Peter J.
Hwang Kyuwoon
Johnson Peter
Mian Michael
National Semiconductor Corporation
Nguyen Tuan H.
Pickering Mark C.
LandOfFree
Method of forming a metal trace with reduced RF impedance... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a metal trace with reduced RF impedance..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a metal trace with reduced RF impedance... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3832867