Method of forming a metal-insulator-metal capacitor in an...

Details Method of forming a metal-insulator-metal capacitor in an... Method of forming a metal-insulator-metal capacitor in an...

2006-10-10

2006-10-10

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S387000, C438S253000

Reexamination Certificate

active

07118985

ABSTRACT:
A metal-insulator-metal capacitor is embedded in an interconnect layer of an integrated circuit (IC). The interconnect layer has a cavity, and the capacitor is formed in the cavity with one of the plates of the capacitor integral with a conductive layer of the interconnect layer, so the capacitor plate electrically communicates with the interconnect layer. The interconnect layer has multiple conductive layers, including a layer, such as aluminum, that is subject to deformation at certain temperatures during fabrication of the IC, and the cavity extends through this layer. A remaining conductive layer of the interconnect layer defines one of the capacitor plates, and a dielectric layer and another capacitor plate are formed thereon within the cavity. Via interconnects of about the same length electrically connect to the top plate and through the interconnect layer to the bottom plate.

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patent: 6081021 (2000-06-01), Gambino et al.
patent: 6180976 (2001-01-01), Roy
patent: 6262446 (2001-07-01), Koo et al.
patent: 6404001 (2002-06-01), Koo et al.
patent: 1143528 (2001-10-01), None

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