Method of forming a metal film, semiconductor device and...

Details Method of forming a metal film, semiconductor device and... Method of forming a metal film, semiconductor device and...

2006-07-18

2006-07-18

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

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Reexamination Certificate

active

07078789

ABSTRACT:
A method of forming a metal film on the surface of a resin substrate by forming plating nuclei on a resin substrate through a step of catalyzing treatment, a step of accelerating treatment and, then, a step of electrolytic copper plating treatment. Ultraviolet light is irradiated when there exist, in a mixed manner, portions exposing the surface of the resin substrate and the metal copper film formed by the electroless copper plating, to enhance the adhesion between the surface of the resin and the metal copper film. A step of ultraviolet light irradiation treatment is conducted after a step of electroless copper plating treatment. This is followed by an additional step of electroless copper plating treatment.

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patent: 2002-57456 (2002-02-01), None

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