Method of forming a metal film on a selectively diffused layer

Details Method of forming a metal film on a selectively diffused layer Method of forming a metal film on a selectively diffused layer

1984-08-16

1986-07-01

Saba, William G.

Metal working

Method of mechanical manufacture

Electrical device making

29578, 29591, 148DIG19, 148DIG20, 148DIG26, 357 65, 427 88, 427 91, H01L 21225, H01L 21285

Patent

active

045971676

ABSTRACT:
A method of producing a semiconductor device, including the steps of introducing an impurity of one conductivity type into a semiconductor substrate of an opposite conductivity type having an insulating film pattern formed on a surface thereof, using the insulating film pattern as a mask to form a diffusion layer; and forming a metal film on the diffusion layer by selective vapor growth with a mixture of a metal source gas and a carrier gas used as a feed gas. The vapor growth is carried out such that the distance of entry of the metal film from the edge of the insulating film pattern to the interface between the insulating film pattern and the diffusion layer is smaller than the depth of the pn junction of the diffusion layer. The particular method makes it possible to achieve a selective vapor growth of a metal film on the diffusion layer without deteriorating the pn junction characteristics.

REFERENCES:
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patent: 4517225 (1985-05-01), Broadbent
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Shaw et al., "Vapor-Deposited Tungsten-Interconnection-Devices", R.C.A. Review, Jun. 1970, pp. 306-316.
Miller et al., "Hot-Wall CVD Tungsten for VLSI", Solid State Technology, Dec. 1980, pp. 79-82.

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