Method of forming a metal contact to a novel polysilicon contact

Details Method of forming a metal contact to a novel polysilicon contact Method of forming a metal contact to a novel polysilicon contact

1996-08-29

1997-11-25

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437194, 437240, 437982, H01L 21324

Patent

active

056912501

ABSTRACT:
A method has been developed for forming a metal contact structure, to an underlying polysilicon contact extension structure, without degrading the polysilicon contact extension structure during the metal contact structure patterning procedure. The process features opening a hole in an insulator layer, to an underlying polysilicon extension structure. The overlying metal contact structure is then patterned to have a width larger then the width of the opened hole in the insulator. Therefore the underlying polysilicon contact extension structure is not exposed to the RIE procedures used to define the metal contact structure.

REFERENCES:
patent: 4341009 (1982-07-01), Bartholomew et al.
patent: 5250468 (1993-10-01), Matsuura et al.
patent: 5578523 (1996-11-01), Fiordalice et al.

Affiliated with

Also associated with

Rating

Method of forming a metal contact to a novel polysilicon contact does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a metal contact to a novel polysilicon contact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a metal contact to a novel polysilicon contact will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2106643