Method of forming a metal contact and passivation of a...

Details Method of forming a metal contact and passivation of a... Method of forming a metal contact and passivation of a...

2007-11-13

2009-10-06

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S739000, C313S495000, C257SE21038, C257SE21235

Reexamination Certificate

active

07598104

ABSTRACT:
A method of forming a metal contact and passivation of a semiconductor feature, and devices made using the method. The method comprises the steps of forming a dielectric mask on a semiconductor substrate utilising photolithography processes; etching the semiconductor substrate such that one or more features are formed underneath respective portions of the dielectric mask; depositing a passivation layer on the substrate with the dielectric mask in place above the features; subjecting the substrate to an etchant such that the dielectric mask is etched at a higher rate than the passivation layer, whereby portions of the passivation layer deposited on the dielectric mask are lifted off from the substrate; and depositing a metal layer on the substrate including over the remaining passivation layer and exposed portions of the features.

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