Method of forming a mask design having advanced oriented...

Details Method of forming a mask design having advanced oriented... Method of forming a mask design having advanced oriented...

2009-07-08

2010-12-28

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C716S030000

Reexamination Certificate

active

07858273

ABSTRACT:
A method of forming a mask for optically transferring a lithographic pattern having a plurality of isolated elements onto a semiconductor substrate, wherein spacing between these isolated elements is controlled according to a given pitch, the method comprising: disposing a plurality of assist features around each of the plurality of isolated elements, each assist feature near to a corner of one isolated element, each assist feature having a width, a length, a first separation parameter defining a distance between individual assist features, and a second separation parameter defining a distance between each of the plurality of assist features and each corresponding adjacent isolated element in the plurality of isolated elements; determining optimized values of the width, the length, the first separation parameter, and the second separation parameter; and setting an assist feature rule according to the given pitch and the optimized values.

REFERENCES:
patent: 2002/0091985 (2002-07-01), Liebmann et al.
patent: 2002/0192570 (2002-12-01), Smith
patent: 2004/0156030 (2004-08-01), Hansen

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