Method of forming a magnetic random access memory structure

Details Method of forming a magnetic random access memory structure Method of forming a magnetic random access memory structure

2006-11-07

2006-11-07

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257SE21665

Reexamination Certificate

active

07132299

ABSTRACT:
A method for forming an MRAM bit is described that includes providing a covering layer over an integrated circuit structure. In one embodiment, the covering layer includes tantalum. A first mask layer is formed over the covering layer followed by a second mask layer. The first mask layer and second mask layer are etchable by the same etching process. The first and second mask layer are etched. Etch residue is removed from the first and second mask layers. The first mask layer is then selectively removed and the second mask layer remains.

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