Method of forming a low voltage drive ferroelectric capacitor

Details Method of forming a low voltage drive ferroelectric capacitor Method of forming a low voltage drive ferroelectric capacitor

2006-07-04

2006-07-04

Lebentritt, Michael (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S253000, C438S396000, C438S381000

Reexamination Certificate

active

07071007

ABSTRACT:
A method of forming a low-voltage drive thin film ferroelectric capacitor includes the steps of depositing a ferroelectric and platinum thin film dielectric layer over a bottom electrode, annealing the dielectric layer, wherein a nanocomposite layer is formed including nanoparticles of platinum and forming a top electrode over the dielectric layer. An integrated circuit is also provided including a ferroelectric capacitor. The capacitor includes a bottom electrode formed over a substrate and a ferroelectric and platinum thin film nanocomposite dielectric layer formed over the bottom electrode, wherein the nanocomposite layer includes nanoparticles of platinum. A top electrode is formed over the dielectric layer.

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