Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-07-04
2006-07-04
Lebentritt, Michael (Department: 2813)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S253000, C438S396000, C438S381000
Reexamination Certificate
active
07071007
ABSTRACT:
A method of forming a low-voltage drive thin film ferroelectric capacitor includes the steps of depositing a ferroelectric and platinum thin film dielectric layer over a bottom electrode, annealing the dielectric layer, wherein a nanocomposite layer is formed including nanoparticles of platinum and forming a top electrode over the dielectric layer. An integrated circuit is also provided including a ferroelectric capacitor. The capacitor includes a bottom electrode formed over a substrate and a ferroelectric and platinum thin film nanocomposite dielectric layer formed over the bottom electrode, wherein the nanocomposite layer includes nanoparticles of platinum. A top electrode is formed over the dielectric layer.
REFERENCES:
patent: 6180970 (2001-01-01), Hwang et al.
patent: 6238933 (2001-05-01), Sun et al.
patent: 6274388 (2001-08-01), Aggarwal et al.
patent: 2001/0000624 (2001-05-01), Hwang et al.
patent: 2002/0074601 (2002-06-01), Fox et al.
patent: 2004/0070015 (2004-04-01), Lung et al.
Hwang et al., “Microstructure and mechanical properties of lead zirconate titanate (PZT) nanocomposites withplantinum particles”, Journal of the Cer. Soc. of Japan , 2000, 108 Apr., pp. 339-344.
Meng et al. ,“Enhanced fatigue propery of PZT thin films using LaNiO3 thin layer as bottom electrode”, Appl. Phy. A. 2001, 73 (3), pp. 323-325.
Hwang et al. ,“Characterizations of sputtered PZT thin films on Pt/Ti?Si substratges”, Han'guk Chaelyo Hakhoechi , 1994, 4(2), pp. 143-151.
Li et al., Electrical and Mechanical Properties of Piezoelectric Ceramic/Metal Composities in the Pb(Zr,Ti)O3/Pt system., Appl. Phys.Letters , vol. 79(15), pp. 2441-2443, (2001).
Yun Wu and Guozhong Cao, “Enhanced Ferroelectric Properties and Lowered Processing Temperatures of Stronium Bismuth Niobates with Vanadium Doping” Applied Physics Letters, vol. 75, No. 17, Oct. 25, 1999, pp. 5354-5357.
Tomio Hirano, et al., “Effects of Excess Lead Addition on Processing of Sol-Gel Derived Lanthanum-Modified Lead Zirocnate Titanate Thin Film” Jpn. J. Appl. Phys. vol. 38 (1999) pp. 5354-5357.
B. Yang, T.K. Song, S. Aggarwal, and R. Ramesh, “Low Voltage Performance of Pb(Zr,Ti)O3Capacitors Through Donor Doping” Appl. Phys. Lett., vol. 71 (24), Dec. 15, 1997, pp. 3578-3580.
T.K. Kundu and D. Chakravorty, “Nanocomposites of Lead-Zirconate-Titanate Glass Ceramics and Metallic Silver,” Appl. Phys. Lett. 67(18), Oct. 30, 1995, pp. 2732-2734.
T.K. Kundu and D. Chakravorty, “Nanocomposites Films of Lead Zirconate Titanate and Metallic Nickel by Sol-Gel Route,” Appl. Phys. Lett. 68 (26) Jun. 26, 1995, pp. 3576-3578.
N. Duan et al., “Enhancement of Dielectric and Ferroelectric Properties by Addition of PT Particles to a Lead Zirconate and Titanate Matrix,” Applied Physics Letters, vol. 77, No. 20, Nov. 13, 2000, pp. 3263-3265.
Tseng Yuan-Chieh
Wang Chao-Hsiung
Wu Tai-Bor
Duane Morris LLP
Huynh Yennhu B.
Taiwan Semiconductor Manufacturing Co. Ltd.
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