Method of forming a low resistivity Ti-containing...

Details Method of forming a low resistivity Ti-containing... Method of forming a low resistivity Ti-containing...

2005-06-14

2005-06-14

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S765000

Reexamination Certificate

active

06906421

ABSTRACT:
This invention relates to a method of forming a local interconnect and a semiconductor device comprising a local interconnect. The semiconductor device comprises:a) a dielectric outside layer; andb) a conductivity structure comprising:i) at least one barrier layer having a thickness of 10-200 Å on a surface of said oxide layer; andii) a conductive layer comprising titanium, on said at least one barrier layer,said at least one barrier layer preventing diffusion of oxygen from said dielectric oxide layer into said conductive layer and having a corresponding oxide that is not soluble in said conductive layer.

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