Method of forming a low resistance quasi-buried contact

Metal working – Method of mechanical manufacture – Assembling or joining

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29571, 29589, 29578, 29576R, 148 15, 148174, 357 41, 357 51, 357 59, 357 71, H01L 2348, H01L 2188, H01L 2946

Patent

active

045691223

ABSTRACT:
A fabrication method and resulting integrated circuit structure that provide a second level of interconnect, a low resistance contact strap between underlying layers which is not sensitive to alignment and low lateral diffusion polysilicon load. The method comprises the steps of providing contact openings in an insulating layer on a wafer to any desired underlying circuit layers, depositing a silicide layer on the wafer, removing selected portions of the silicide layer, depositing a polysilicon layer on the wafer, lightly doping the polysilicon layer to a level appropriate for the resistor, and then removing portions of the polysilicon along with underlying silicide.

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