Method of forming a low K dielectric in a semiconductor...

Details Method of forming a low K dielectric in a semiconductor... Method of forming a low K dielectric in a semiconductor...

2005-06-07

2005-06-07

Smith, Matthew (Department: 2825)

Electrical connectors

With insulation other than conductor sheath

Insulating body comprising or for use with cylindrical cap...

C257S058000

Reexamination Certificate

active

06902440

ABSTRACT:
A low K dielectric composite layer is formed of a low k barrier layer and a low K dielectric layer on the barrier layer. The barrier layer, which is deposited with the result of having a hydrophobic top surface, is treated with an oxygen plasma to convert the surface from hydrophobic to hydrophilic. A subsequent water-based clean is very effective in removing yield-reducing defects on the barrier layer due to the conversion of the surface of the barrier layer. After the water-based clean, the low K dielectric layer is formed on the surface of the barrier layer to achieve the composite layer that has a low K.

REFERENCES:
patent: 5607773 (1997-03-01), Ahlburn et al.
patent: 6386212 (2002-05-01), Robinson
patent: 2002/0189643 (2002-12-01), Chen
patent: 2003/0068853 (2003-04-01), Conti
patent: 2003/0087534 (2003-05-01), Mallikarjunan
patent: 2003/0114000 (2003-06-01), Noguchi
patent: 2003/0155657 (2003-08-01), Tonegawa et al.
patent: 2003/0228769 (2003-12-01), Chen et al.

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