Method of forming a low dislocation density semiconductor device

Details Method of forming a low dislocation density semiconductor device Method of forming a low dislocation density semiconductor device

1990-04-09

1991-11-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG15, 148DIG155, 437133, 437132, 437247, 437939, 437976, H01L 21265

Patent

active

050631667

ABSTRACT:
A low dislocation density semiconductor device includes a first semiconductor layer of a III-V or II-VI semiconductor compound and alloying atoms on a non-metal substrate. The semiconductor compound usually has a large dislocation density. A predetermined position of the alloying atoms in the compound lattice structure can substantially reduce the compound dislocation density. Energy is applied to the alloying atoms so they are at the predetermined positions. The number of alloying atoms causes the semiconductor compound solubility limit to be exceeded. The layer is formed on a substrate of the III-V or II-VI semiconductor, such as gallium arsenide or another semiconductor, such as silicon or on an insulator such as sapphire. In the latter cases, the layer is formed on an intermediate layer having a lattice constant between that of the substrate and semiconductor compound. A second layer is epitaxially deposited on the first layer so both layers have virtually the same lattice constant and dislocation density. The alloying atoms are deposited by different energy assist methods, e.g. by an ion beam that irradiates the substrate, or by an energy assisted organometallic chemical vapor deposition process. The energy assist can be by ionization or optical irradiation causing topical heating of surface atoms deposited by the OMCVD process, without heating of the substrate or the underlying atoms. If the ion beam process is employed, the substrate is annealed such that the alloying atoms move from initial random locations thereof in the compound lattice to the predetermined locations.

REFERENCES:
patent: 3992175 (1970-01-01), Conrad et al.
patent: 4033788 (1977-07-01), Hunsperger et al.
patent: 4193182 (1980-03-01), Lee
patent: 4255211 (1981-03-01), Fraas
patent: 4509990 (1985-04-01), Vasudev
patent: 4561169 (1985-12-01), Miyazaki et al.
patent: 4568792 (1986-02-01), Mooney et al.
patent: 4602965 (1986-07-01), McNally
patent: 4611388 (1986-09-01), Pande
patent: 4659401 (1987-04-01), Reif et al.
patent: 4697202 (1987-09-01), Sher
patent: 4713354 (1987-12-01), Egawa et al.
patent: 4734514 (1988-03-01), Melas et al.
patent: 4740606 (1988-04-01), Melas
patent: 4743569 (1988-05-01), Plumtan et al.
patent: 4835116 (1989-05-01), Lee et al.
patent: 4863877 (1989-09-01), Fan et al.
patent: 4876211 (1989-10-01), Kanber et al.
patent: 4910158 (1990-03-01), Anderson
Williams, "Transient Annealing of Ion Implanted Gallium Arsenide," Mat. Res. Soc. Symp. Proc., vol. 13, 1983, pp. 621-632.
Stutius, "Growth and Doping of ZNS . . . by Organometallic Chemical Vapor Deposition," J. Crystal Growth, vol. 56, 1982, pp. 1-9.
Bass et al., "MOCVD of Indium Phosphide . . . Trimethylamine Adducts," J. Crystal Growth, vol. 75, 1986, pp. 221-226.
Barnett et al., "A Review of Recent Results on Single Crystal Metastable Semiconductors: Crystal Growth, Phase Stability and Physical Properties," Materials Research Society Symposia Proceeding, vol. 37 (1985).

Affiliated with

Also associated with

Rating

Method of forming a low dislocation density semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a low dislocation density semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a low dislocation density semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-498855