Method of forming a lithographic mask

Details Method of forming a lithographic mask Method of forming a lithographic mask

1997-12-22

1999-05-04

Booth, Richard A.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438949, 430 5, 430313, 430314, 430323, H01L 2130, H01L 2146

Patent

active

058997288

ABSTRACT:
A method of forming a lithographic mask that comprises the steps of obtaining a first substrate having a first base and a first layer over the first base. The first layer is patterned, as is at least a portion of the entire thickness of the first base to form a first pattern. A second substrate having a second base is obtained and a second layer is formed over the second base. A third layer is formed over the second layer. The third layer is patterned to form an attenuating pattern corresponding to a semiconductor device feature pattern and the first and second substrates are bonded after patterning the first layer. The second base is etched to remove the entire thickness of the second base corresponding to the first pattern. The steps need not be sequential in the above method.

REFERENCES:
patent: 5426016 (1995-06-01), Fujioka et al.
patent: 5521033 (1996-05-01), Okamoto
Berger, et al., "Projection Electron-Beam Lithography: A New Approach", J. Vac. Sci. Technol. B, vol. 9 (60), pp. 2996-2999 (1991).
Liddle, et al., "Mask Fabrication for Projection Electron-Beam Lithography Incorporating the SCALPEL Technique", J. Vac. Sci. Technol. B 9 (6), pp. 3000-3004 (1991).

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