Method of forming a liquid crystal display

Liquid crystal cells – elements and systems – Nominal manufacturing methods or post manufacturing...

Reexamination Certificate

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C438S373000, C438S506000

Reexamination Certificate

active

06924874

ABSTRACT:
The present invention provides a method of forming a liquid crystal display (LCD). Active layers of N-type and P-type low temperature polysilicon thin film transistors and a bottom electrode of a storage capacitor are formed first. Then a N-type source/drain is formed and the bottom electrode is doped with dopants. A gate insulator, a gate electrode, a capacitor dielectric, and a top electrode are thereafter formed. After that, a P-type source/drain is formed. Finally, a source interconnect, a drain interconnect, and a pixel electrode of the liquid crystal display are formed.

REFERENCES:
patent: 6249327 (2001-06-01), Murade et al.
patent: 6642073 (2003-11-01), Zhang et al.

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