Method of forming a light emitting diode

Details Method of forming a light emitting diode Method of forming a light emitting diode

1992-11-27

1993-12-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437129, 437984, 437184, 257600, H01L 2120, H01L 21203

Patent

active

052702456

ABSTRACT:
A method of forming a III-V semiconductor device (10, 20) utilizes a III-V semiconductor substrate (11) having a plurality of III-V semiconductor layers (12, 14, 15, 16, 17). A pattern layer ( 19, 24) is formed on the plurality of layers (12, 14, 15, 16, 17). The plurality of III-V semiconductor layers (12, 14, 15, 16, 17) is etched with an isotropic etch that does not etch the pattern layer (19, 24). The isotropic etch undercuts the pattern layer (19, 24) and exposes an area for forming ohmic contacts on the plurality of III-V semiconductor layers. The pattern layer (19, 24) is used as a mask while depositing ohmic contact material (22, 23, 28) onto the area for forming ohmic contacts.

REFERENCES:
patent: 4662988 (1987-05-01), Renner
patent: 4969712 (1990-11-01), Westwood et al.
patent: 5021361 (1991-06-01), Kimoshita et al.
patent: 5064772 (1991-11-01), Jambotkar

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