Method of forming a layer of silicon carbide on a silicon wafer

Details Method of forming a layer of silicon carbide on a silicon wafer Method of forming a layer of silicon carbide on a silicon wafer

2004-05-05

2008-08-26

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

C117S089000, C117S095000

Reexamination Certificate

active

07416606

ABSTRACT:
The invention relates to a method of forming a layer of silicon carbide on a silicone wafer. The method includes the following steps: depositing an anti-carburation mask on the wafer using an essentially-check pattern; performing a carburation step under conditions such that the residual stress takes the form of extension and compression respectively; removing the mask; and form of extension and compression respectively; removing the mask; and performing a carburation step under conditions such that the residual stress takes form of compression and extension respectively.

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Pensl, et al., “Silicon Carbide and Related Materials”, Proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Materials Science Forum vols. 353-356 (2001) pp. 155-158.
Pensl, et al. “Silicon Carbide and Related Materials,” Proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Material Science Forum vols. 353-356 (2001) pp. 155-158.

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