Method of forming a layer of material on a wafer

Coating processes – Coating by vapor – gas – or smoke

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118715, C23C 1606

Patent

active

056352441

ABSTRACT:
Disclosed is a wafer clamp which holds a wafer in place during chemical vapor deposition processes. The wafer clamp includes (1) a clamp body having an inner facing portion and an outer facing portion; and (2) an overhang member attached to and extending inwardly from the inner facing portion of the clamp body. The clamp is designed such that when it holds the wafer, the overhang member extends over the wafer's peripheral region and is separated from that peripheral region by at least a predefined distance. The peripheral region is a region on the wafer's upper face that resides near the perimeter of the upper face. The predefined distance is chosen such that during deposition, a layer of material does not contact both the wafer face and the overhang member. The predefined distance is at least about 100 times the thickness of the layer of material. When the disclosed wafer clamp is used to hold a wafer for reaction in a chemical vapor deposition reactor, a deposition layer is formed that contacts only the wafer and not the clamp as well.

REFERENCES:
patent: 5094885 (1992-03-01), Selbrede
patent: 5180432 (1993-01-01), Hansen
patent: 5356476 (1994-10-01), Foster et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming a layer of material on a wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a layer of material on a wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a layer of material on a wafer will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-389772

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.