Method of forming a layer of doped crystalline semiconductor all

Details Method of forming a layer of doped crystalline semiconductor all Method of forming a layer of doped crystalline semiconductor all

1990-07-09

1993-01-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437101, 437108, 437109, 437165, 437234, 437967, 148DIG1, 148DIG122, H01L 2100, H01L 2102, H01L 21225, H01L 21324

Patent

active

051806908

ABSTRACT:
A method for the low temperature fabrication of doped polycrystalline semiconductor alloy material. The method includes the steps of exposing a body of semiconductor alloy material to a reaction gas containing at least a source of the dopant element, and establishing an electrical potential sufficient to sputter etch the surface of said layer, while decomposing the reaction gas. This allows for the deposition of a layer of doped amorphous semiconductor alloy material upon the body of semiconductor alloy material. Thereafter, the doped layer of amorphous semiconductor alloy material is exposed to an annealing environment sufficient to at least partially crystallize said amorphous material, and activate the dopant element.

REFERENCES:
patent: 3770521 (1973-11-01), Demsky et al.
patent: 3998675 (1976-12-01), Langheinrich et al.
patent: 4028151 (1977-06-01), Lindmayer
patent: 4132818 (1979-01-01), Chappelow et al.
patent: 4178415 (1979-12-01), Ovshinsky et al.
patent: 4317844 (1982-03-01), Carlson
patent: 4342044 (1982-07-01), Ovshinsky et al.
patent: 4353788 (1982-10-01), Jeffrey et al.
patent: 4358326 (1982-11-01), Doo
patent: 4359367 (1982-11-01), Zukotynski et al.
patent: 4382099 (1983-05-01), Legge et al.
patent: 4417092 (1983-11-01), Moustakas et al.
patent: 4465529 (1984-08-01), Arima et al.
patent: 4529617 (1985-07-01), Chenevas-Paule et al.
Sze, S., VLSI Technology, Chapters 3 and 9, McGraw-Hill, 1983.
Brodsky, M., Doping of Sputtered Amorphous Semiconductors, IBM Tech. Discl. Bul., vol. 19, No. 12, May 1977, pp. 4802-4803.
Weissmantel, C., Ion Beam Sputtering and Its Applications for the Deposition of Semiconducting Films, Thin Solid Films, 13 (1972), pp. 359-366.
Philips, P., Doping of Solids from the Vapor Phase, IBM Tech. DIscl. Bul., vol. 14, No. 3, Aug. 1971, pp. 923-924.

Affiliated with

Also associated with

Rating

Method of forming a layer of doped crystalline semiconductor all does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a layer of doped crystalline semiconductor all, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a layer of doped crystalline semiconductor all will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-102009