Method of forming a landing pad structure in an integrated circu

Fishing – trapping – and vermin destroying

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437191, 437190, H01L 2144

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active

057029792

ABSTRACT:
A method is provided for forming an improved landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A first opening is formed through a first dielectric layer to expose a portion of a diffused region. A first polysilicon landing pad is formed over the first dielectric layer and in the opening. This landing pad will provide for smaller geometries and meet stringent design rules such as that for contact space to gate. A dielectric pocket is formed over the polysilicon landing pad over the active region. A second conductive landing pad is formed over the polysilicon landing pad and the dielectric pocket. A second dielectric layer is formed over the landing pad having a second opening therethrough exposing a portion of the landing pad. A conductive contact, such as aluminum, is formed in the second contact opening. The conductive contact will electrically connect with the diffused region through the landing pad. Misalignment of the conductrive contact opening over the landing pad may be tolerated without invading design rules. The landing pad and the dielectric pocket will enhance planarization to provide for better step coverage of the metal contact in the second opening.

REFERENCES:
patent: 4441247 (1984-04-01), Gargini et al.
patent: 4707457 (1987-11-01), Erb
patent: 4789885 (1988-12-01), Brighton et al.
patent: 4810666 (1989-03-01), Taji
patent: 4822749 (1989-04-01), Flanner et al.
patent: 4844776 (1989-07-01), Lee et al.
patent: 4868138 (1989-09-01), Chan et al.
patent: 4908332 (1990-03-01), Wu
patent: 4916397 (1990-04-01), Masuda et al.
patent: 4922311 (1990-05-01), Lee et al.
patent: 4984056 (1991-01-01), Fujimoto et al.
patent: 4997790 (1991-03-01), Woo et al.
patent: 5036383 (1991-07-01), Mori
patent: 5071783 (1991-12-01), Taguchi et al.
patent: 5110752 (1992-05-01), Lu
patent: 5158910 (1992-10-01), Cooper et al.
patent: 5210429 (1993-05-01), Adan
patent: 5219789 (1993-06-01), Adan
patent: 5229326 (1993-07-01), Dennison et al.
patent: 5247199 (1993-09-01), Matlock
patent: 5275972 (1994-01-01), Ogawa et al.
patent: 5298463 (1994-03-01), Sandhu et al.
patent: 5298792 (1994-03-01), Manning
patent: 5308795 (1994-05-01), Hawley et al.
patent: 5316976 (1994-05-01), Bourg, Jr. et al.
patent: 5359226 (1994-10-01), DeJong
patent: 5420058 (1995-05-01), Lee et al.
patent: 5514622 (1996-05-01), Bornstein et al.
Broadbent, et al., "Selective Low Pressure Chemical Vapor Deposition of Tungsten," J. Electrochem. Soc.: Solid-State Science and Technology, vol. 131, No. 6, Jun. 1984, pp. 1427-1433.
G. Queirolo, et al., "Dopant Activation, Carrier Mobility, and TEM Studies in Polycrystalline Silicon rilms", J. Electrochem. Soc., V. 137, No. 3, Mar. 1990, pp. 967-970.
C.S. Pai, et al., "Chemical Vapor Deposition of Selective Epitaxial Silicon Layers", J. Electrochem. Soc., V. 137, No. 3, Mar. 1990, pp. 971-976.
M. Cleeves, et al., "A Novel Disposable Post Technology for Self-Aligned Sub-Micron Contacts", 1994 IEEE, 1994 Symposium on VLSI Technology Digest of Technical Papers, pp. 61-62.

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