Method of forming a lamination film pattern and improved...

Details Method of forming a lamination film pattern and improved... Method of forming a lamination film pattern and improved...

2005-12-07

2009-06-30

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

C257S798000, C257S210000

Reexamination Certificate

active

07554207

ABSTRACT:
In a method of forming an electrically conductive lamination pattern, an insulating film is formed on a surface of a chromium-containing bottom layer, before an aluminum-containing top layer is formed over the insulating film, so that the insulating film separates the aluminum-containing top layer from the chromium-containing bottom layer. A first selective wet etching process is carried out for selectively etching the aluminum-containing top layer with a first etchant. A second selective wet etching process is carried out for selectively etching the chromium-containing bottom layer with a second etchant in the presence the insulating film which suppresses a hetero-metal-contact-potential-difference between the chromium-containing bottom layer and the aluminum-containing top layer during the second selective wet etching process.

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