Method of forming a lamination film pattern and improved...

Details Method of forming a lamination film pattern and improved... Method of forming a lamination film pattern and improved...

2006-03-14

2006-03-14

Wilson, Christian D. (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S652000, C438S654000, C438S656000, C438S735000, C438S736000

Reexamination Certificate

active

07012029

ABSTRACT:
In a method of forming an electrically conductive lamination pattern, an insulating film is formed on a surface of a chromium-containing bottom layer, before an aluminum-containing top layer is formed over the insulating film, so that the insulating film separates the aluminum-containing top layer from the chromium-containing bottom layer. A first selective wet etching process is carried out for selectively etching the aluminum-containing top layer with a first etchant. A second selective wet etching process is carried out for selectively etching the chromium-containing bottom layer with a second etchant in the presence the insulating film which suppresses a hetero-metal-contact-potential-difference between the chromium-containing bottom layer and the aluminum-containing top layer during the second selective wet etching process.

REFERENCES:
patent: 5968850 (1999-10-01), Jeong et al.
patent: 6208395 (2001-03-01), Kanoh et al.
patent: 6215541 (2001-04-01), Song et al.
patent: 6297519 (2001-10-01), Fujikawa et al.
patent: 6524876 (2003-02-01), Baek et al.
patent: 59-12419 (1984-01-01), None
patent: 1-120025 (1989-05-01), None
patent: 4-48733 (1992-02-01), None
patent: 4-155315 (1992-05-01), None
patent: 8-160450 (1996-06-01), None
patent: 9-189924 (1997-07-01), None
patent: 9-292630 (1997-11-01), None

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