Method of forming a laminated ribbon structure

Details Method of forming a laminated ribbon structure Method of forming a laminated ribbon structure

1978-10-13

1980-10-21

Ozaki, G.

Metal treatment

Compositions

Heat treating

148171, 75177, 156624, 164 95, 427 86, 428620, H01L 21208

Patent

active

042292310

ABSTRACT:
A method of forming, by melt-spinning techniques, a laminated ribbon structure consisting, for example, of a semiconductor disposed on a metal ribbon substrate. The substrate may be 10-100 .mu.m thick and the semiconductor may be 10-100 .mu.m thick, for example; typically the ribbon width is about one millimeter to several centimeters.

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Witt et al., "On the Formation of Laminated Semiconductor-Amorphous Metal Ribbon by Melt-Spinning Technique," pp. 1-6, unpublished.
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