Method of forming a highly insulative thin films

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437235, 437243, 437239, 437244, 437173, H01L 2102

Patent

active

051224836

ABSTRACT:
A method of forming a highly insulative silicon oxide thin film including the steps of providing a substrate, depositing silicon on the substrate, and injecting an ion beam of oxygen or a mixed gas consisting of oxygen and an inert gas simultaneously or alternately with the depositing of the silicon. Silicon oxide may be deposited on the substrate in combination with the injection of ions of an inert gas. Other metals made be deposited along with the injection of oxygen or nitrogen cations.

REFERENCES:
patent: 4001049 (1977-01-01), Baglin et al.
patent: 4483725 (1984-11-01), Chang
patent: 4624859 (1986-11-01), Akira et al.
patent: 4673475 (1991-09-01), Windschmann
patent: 4776925 (1988-10-01), Fossum et al.
Ishikawa, "Low temperature formation . . . an ICB Source", Vacuum, vol. 39, No. 11-12, Apr. 1989, pp. 1111-1113.
Al-Jumaily et al., "Ion assisted deposition of oxynitrides of aluminum and silicon", J. Vac. Sci. Technol. A 7(3), May/Jun. 1989, pp. 2280-2285.
Minowa et al., "SiO.sub.2 films deposited on Si by dual ion beams"; J. Vac. Sci. Technol. B 6(1), Jan./Feb. 1988, pp. 473-476.
Cuomo, "Step coverage during thin film deposition", IBM Tech. Disclosure Bulletin, vol. 24, No. 2, Jul. 1981, pp. 1077-1078.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming a highly insulative thin films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a highly insulative thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a highly insulative thin films will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1753631

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.