Method of forming a high voltage silicon-on-sapphire photocell a

Details Method of forming a high voltage silicon-on-sapphire photocell a Method of forming a high voltage silicon-on-sapphire photocell a

1992-08-31

1994-07-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 51, 437 86, 437225, 437974, 148DIG12, H01L 3118

Patent

active

053309189

ABSTRACT:
A method is provided for forming a multi-cell photovoltaic circuit on an insulating substrate, comprising the steps of: forming a photovoltaic junction between p-type and n-type layers in a silicon wafer; bonding the silicon wafer to an insulating substrate after forming the photovoltaic junction; patterning the silicon wafer to produce isolated photovoltaic cells; and electrically interconnecting the photovoltaic cells.

REFERENCES:
patent: 4276137 (1981-05-01), Hovel et al.
patent: 4323719 (1982-04-01), Green
patent: 4428110 (1984-01-01), Kim
patent: 4589191 (1986-05-01), Green et al.
patent: 4623751 (1986-11-01), Kishi et al.
patent: 4642414 (1987-02-01), Rasch et al.
patent: 4774194 (1988-09-01), Hokuyou
patent: 4837182 (1989-06-01), Bozler et al.
patent: 4865999 (1989-09-01), Xi et al.
patent: 4872925 (1989-10-01), McMaster
patent: 5110748 (1992-05-01), Sarma
patent: 5164019 (1992-11-01), Sinton
Heterojunction V-Groove Multijunction Solar Cells; pp. 3456-3457, Chappell t al.; IBM Tech. Disc. Bulletin; 23(7B), Dec. 1980.
A Nonconventional approach to thin film cell fabrication; Kirkpatrick et al.; IEEE Photovoltaic Specialists Conf.; Jun. 1978; pp. 1342-1346.

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