Method of forming a high performance low thermal loss bi-tempera

Details Method of forming a high performance low thermal loss bi-tempera Method of forming a high performance low thermal loss bi-tempera

1997-07-14

1998-07-14

Tsai, Jey

Semiconductor device manufacturing: process

Having superconductive component

H01L 3924

Patent

active

057803145

ABSTRACT:
A superconductive electrical device is operable simultaneously at relatively higher temperatures, i.e., 60-90K, and at relatively lower temperatures, i.e., less than 12K. The device comprises a non-superconductive substrate with two regions, a first relatively high temperature region and a second relatively low temperature region. A high temperature superconductor is on the first region and a portion of the second region. A dielectric layer is on the high temperature superconductor. A low temperature superconductor is on the second region of the substrate and on a portion of the dielectric layer. Integrated circuit chips can be secured to both superconductors, thereby yielding a superconductive multi-chip module operable at two different temperatures, such as in a cryo-cooler with two temperature stages.

REFERENCES:
patent: 4809133 (1989-02-01), Faris et al.
patent: 5430012 (1995-07-01), Nakamura et al.
patent: 5567673 (1996-10-01), Face et al.

Affiliated with

Also associated with

Rating

Method of forming a high performance low thermal loss bi-tempera does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a high performance low thermal loss bi-tempera, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a high performance low thermal loss bi-tempera will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1881002