Method of forming a high impedance antifuse

Details Method of forming a high impedance antifuse Method of forming a high impedance antifuse

2011-07-19

2011-07-19

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

C438S467000, C438S600000, C257S530000, C257SE23147

Reexamination Certificate

active

07981731

ABSTRACT:
A programmable element that has a first diode having an electrode and a first insulator disposed between the substrate and said electrode of said first device, said first insulator having a first value of a given characteristic, and an FET having an electrode and a second insulator disposed between the substrate and said electrode of said second device, said second insulator having a second value of said given characteristic that is different from said first value. The electrodes of the diode and the FET are coupled to one another, and a source of programming energy is coupled to the diode to cause it to permanently decrease in resistivity when programmed. The programmed state of the diode is indicated by a current in the FET, which is read by a sense latch. Thus a small resistance change in the diode translates to a large signal gain/change in the latch. This allows the diode to be programmed at lower voltages.

REFERENCES:
patent: 4344222 (1982-08-01), Bergeron et al.
patent: 4665295 (1987-05-01), McDavid
patent: 5208177 (1993-05-01), Lee
patent: 5242851 (1993-09-01), Choi
patent: 5480828 (1996-01-01), Hsu et al.
patent: 5553017 (1996-09-01), Ghezzi et al.
patent: 5557136 (1996-09-01), Gordon et al.
patent: 5610084 (1997-03-01), Solo de Zaldivar
patent: 5656534 (1997-08-01), Chen et al.
patent: 5909049 (1999-06-01), McCollum
patent: 6020777 (2000-02-01), Bracchitta et al.
patent: 6051851 (2000-04-01), Ohmi et al.
patent: 6117733 (2000-09-01), Sung et al.
patent: RE36893 (2000-10-01), Pramanik et al.
patent: 6140692 (2000-10-01), Sher et al.
patent: 6240033 (2001-05-01), Yang et al.
patent: 6396120 (2002-05-01), Bertin et al.
patent: 6396121 (2002-05-01), Bertin et al.
patent: 6433382 (2002-08-01), Orlowski et al.
patent: 6580145 (2003-06-01), Wu et al.
patent: 6624031 (2003-09-01), Abadeer et al.
patent: 6638794 (2003-10-01), Tseng
patent: 6964906 (2005-11-01), Bunt et al.
patent: 6992925 (2006-01-01), Peng
patent: 7098083 (2006-08-01), Fifield et al.
patent: 2003/0098495 (2003-05-01), Amo et al.
patent: 2005/0162928 (2005-07-01), Rosmeulen

Affiliated with

Also associated with

Rating

Method of forming a high impedance antifuse does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a high impedance antifuse, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a high impedance antifuse will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2667575