Method of forming a high-frequency transistor T gate electrode

Details Method of forming a high-frequency transistor T gate electrode Method of forming a high-frequency transistor T gate electrode

1996-01-19

1998-07-07

Trinh, Michael

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

438579, 438951, H01L 2128

Patent

active

057768200

ABSTRACT:
A method of forming a T-type gate electrode of a high-frequency transistor having excellent high-frequency power transfer characteristic with no concave portions and protrusions. A first resist pattern having a first relatively narrow opening is formed on a semiconductor substrate and a leg portion of the electrode is formed in the first opening by depositing electrode metal on the substrate. A second resist pattern having a second relatively wide opening is formed over the electrode leg portion for locating an exposed tip of the electrode leg portion in the bottom of the second opening and forming a head portion of the electrode by depositing electrode metal in the second opening. The head portion is etched for removing any protrusions formed on the head portion.

REFERENCES:
patent: 4283483 (1981-08-01), Coane
patent: 4700462 (1987-10-01), Beaubien et al.
patent: 4975382 (1990-12-01), Takasugi
patent: 4977100 (1990-12-01), Shimura
patent: 5496779 (1996-03-01), Lee et al.

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