Method of forming a high conductivity metal interconnect using m

Details Method of forming a high conductivity metal interconnect using m Method of forming a high conductivity metal interconnect using m

1997-10-06

1999-11-30

Booth, Richard

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

438637, 438675, 438686, 438687, 438688, 438632, 438646, H01L 21225, H01L 21385

Patent

active

059942061

ABSTRACT:
A method and system for providing a via structure for a high conductivity metal of a integrated circuit is disclosed. In a first aspect the method and system comprises etching a photoresist material and a dielectric material down to the high conductivity metal to form a via hole. The via hole includes sputtered high conductivity metal on the sidewalls. The method and system further includes providing a via plug material within the via hole. The vial plug material substantially covers a base portion of the high conductivity metal and the sidewalls of the via hole. The via plug material is also capable of gettering or dissolving the high conductivity metal sputtered on the sidewalls of the dielectric material. In a second aspect, a via structure for an integrated circuit is disclosed in accordance with the present invention. The via structure includes a high conductivity metal and a dielectric material surrounding the high conductivity metal. The dielectric material includes sidewalls to form a via hole on tope of the high conductivity metal. The via structure further includes a via plug material covering the high conductivity metal and substantially filling the via hole. The via plug material is also capable of gettering or dissolving the high conductivity metal sputtered on the sidewalls of the via hole. Accordingly, by providing a via plug material within the via hole, the via plug material getters or dissolves the high conductivity metal that reaches the sidewalls of the dielectric layer during the via etch and sputter etch processes and the junction poisoning problems associated therewith are substantially minimized.

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