Semiconductor device manufacturing: process – Avalanche diode manufacture
Reexamination Certificate
2007-09-21
2010-02-23
Smith, Zandra (Department: 2891)
Semiconductor device manufacturing: process
Avalanche diode manufacture
C438S983000, C257S603000, C257SE29335, C257SE21356
Reexamination Certificate
active
07666751
ABSTRACT:
In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.
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Fuchs Earl D.
Grivna Gordon M.
Marreiro David D.
Shastri Sudhama C.
Hightower Robert F.
Semiconductor Components Industries LLC
Smith Zandra
Tornow Mark W
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