Method of forming a heterostructure diode

Details Method of forming a heterostructure diode Method of forming a heterostructure diode

1990-02-23

1991-12-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437101, 437100, 437 3, 437904, H01L 2104

Patent

active

050700278

ABSTRACT:
A heterostructure diode is produced by a plasma CVD process. A defect caused on a silicon single crystal substrate by plasma deposition during formation of an amorphous semiconductor film leads to a problem of increase in the dark current due to the defect level. This defect is compensated for by active hydrogen contained in the amorphous semiconductor film so as to reduce the dark current. This can be effected by an annealing process conducted after formation of the heterojunction diode. The RF power is set low in the beginning period of formation of the semiconductor film. A radiation detecting apparatus is provided in which a plurality of the heterostructure diodes are integrated on a common substrate.

REFERENCES:
patent: 4362766 (1982-12-01), Dannhauser et al.
patent: 4569697 (1986-02-01), Tsu et al.
patent: 4692782 (1987-09-01), Seki et al.
patent: 4768072 (1988-08-01), Seki et al.
Silicon Heterojunction Bipolar Transistors with Amorphous-, Symons et al., Solid-State Elec., vol. 30, No. 11, pp. 1143-1145, 1987.
On the Influence of Hydrogen on the Transport Properties of Amor. Si., Miller and Kalbitzer, 1977, pp. 347-351.

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