Method of forming a heteroepitaxial semiconductor thin film usin

Details Method of forming a heteroepitaxial semiconductor thin film usin Method of forming a heteroepitaxial semiconductor thin film usin

1989-03-03

1989-10-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG25, 148DIG72, 148DIG97, 148DIG154, 148DIG169, 156612, 437107, 437108, 437111, 437132, 437976, H01L 2120

Patent

active

048762199

ABSTRACT:
A method of forming a semiconductor thin layer on a silicon substrate comprising the steps of depositing a first amorphous layer of a compound semiconductor (e.g., GaAs) on the silicon substrate, and growing a first epitaxial layer of the compound semiconductor on the amorphous layer, characterized in that the method comprises the steps of: after the epitaxial growth step, depositing a second amorphous layer of the compound semiconductor on the first epitaxial layer, and growing a second epitaxial layer of the compound semiconductor on the second amorphous layer. The obtained GaAs/Si substrate has a reduced dislocation density.

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