Method of forming a hemispherical grained silicon on refractory

Details Method of forming a hemispherical grained silicon on refractory Method of forming a hemispherical grained silicon on refractory

1997-01-08

1999-05-04

Dutton, Brian

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

255665, 255964, H01L 218242

Patent

active

058997253

ABSTRACT:
Disclosed is a method of growing hemispherical grained silicon (HSG silicon) over a conductive seed layer. In a preferred embodiment, a contact window is etched in an insulating layer to expose a circuit node, such as an active area of a substrate or a contact plug leading to an active area. A layer of titanium nitride is deposited over the insulating layer and into the contact window. The titanium nitride (TiN) serves as the seed layer for HSG silicon growth to follow. Polysilicon is deposited and grows around nucleation sites on the TiN surface. The TiN provides both electrical and mechanical support for the HSG silicon. Additionally, as TiN is an effective diffusion barrier, the HSG silicon may be heavily doped without undue risk of dopant diffusion to the active area.

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