Method of forming a hemispherical grained capacitor

Details Method of forming a hemispherical grained capacitor Method of forming a hemispherical grained capacitor

1999-10-27

2000-12-12

Niebling, John F.

Semiconductor device manufacturing: process

Roughened surface

438253, 438255, 438396, 438398, 438243, 438386, 438389, 438246, H01L 218242, H01L 2120

Patent

active

061598747

ABSTRACT:
A method of manufacturing a capacitor is provided where at least a portion of a silicon surface is amorphized. The amorphized silicon surface is then subjected to an annealing process to form hemispherical silicon grains (HSG) from the amorphized portion of the silicon surface to form at least a portion of a first electrode of the capacitor. A capacitor dielectric is then formed over the hemispherical silicon grains. A second electrode is then formed over the capacitor dielectric.

REFERENCES:
patent: 5856007 (1999-01-01), Sharan et al.
Wolf et al., "Silicon Processing for the VLSI Era, vol. 1--Process Technology." Lattice Press, 1986, pp (297-303).

Affiliated with

Also associated with

Rating

Method of forming a hemispherical grained capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a hemispherical grained capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a hemispherical grained capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-216609