Fishing – trapping – and vermin destroying
Patent
1991-11-27
1993-12-14
Quach, T. N.
Fishing, trapping, and vermin destroying
437 70, 437175, 437194, 437200, 437203, H01L 21283, H01L 2131
Patent
active
052702561
ABSTRACT:
A method of forming a guard wall for a semiconductor die is described. A dielectric layer is deposited over a semiconductor substrate. The dielectric layer is patterned to form a guard wall opening extending through the dielectric layer. The guard wall opening lies adjacent to an electrically active region of the die. The guard wall opening has a pattern without any straight line segments greater than about 10 .mu.m long. A first layer is deposited over the substrate and etched to form a first layer sidewall spacer along a side of the guard wall opening. A second layer is deposited within the guard wall opening to form the guard wall.
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Bost Melton C.
Deeter Timothy L.
Gasser Robert A.
Yang Shi-ning
Intel Corporation
Quach T. N.
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