Coherent light generators – Particular active media – Semiconductor
Patent
1995-01-30
1996-10-15
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 318
Patent
active
055661980
ABSTRACT:
The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.
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patent: 5163064 (1992-11-01), Kim et al.
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Patent Abstracts of Japan, vol. 16, No. 308 (1992). JP4085503.
Patent Abstracts of Japan, vol. 8, No. 13 (1984). JP 8175886.
Fujimori Toshinari
Goto Hideki
Horie Hideyoshi
Hosoi Nobuyuki
Nagao Satoru
Bovernick Rodney B.
Conlin David G.
Corless Peter F.
McNutt Robert
Mitsubishi Chemical Corporation
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